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RU3090M MOSFET Transistor

The RU3090M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU3090M transistor as follows.

Circuit diagram symbol of the RU3090M transistor

RU3090M Transistor Specification

Transistor Code RU3090M
Transistor Type MOSFET
Control Channel Type N-Channel
Package PDFN5060
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 29A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0025Ohm
Power Dissipation (Maximum) PD 4.2W
Drain-Source Capacitance 850pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 3V

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