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RU3070M MOSFET Transistor

The RU3070M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU3070M transistor as follows.

Circuit diagram symbol of the RU3070M transistor

RU3070M Transistor Specification

Transistor Code RU3070M
Transistor Type MOSFET
Control Channel Type N-Channel
Package PDFN5060
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 23A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.005Ohm
Power Dissipation (Maximum) PD 4.2W
Drain-Source Capacitance 580pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 2.5V

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