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RU3040M MOSFET Transistor

The RU3040M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU3040M transistor as follows.

Circuit diagram symbol of the RU3040M transistor

RU3040M Transistor Specification

Transistor Code RU3040M
Transistor Type MOSFET
Control Channel Type N-Channel
Package PDFN5060
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 4.2W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2.5V

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