RU30291R MOSFET Transistor

The RU30291R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30291R transistor as follows.

RU30291R Transistor Specification

Transistor Code		RU30291R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	290A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1010pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		3V

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