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RU30231R MOSFET Transistor

The RU30231R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30231R transistor as follows.

Circuit diagram symbol of the RU30231R transistor

RU30231R Transistor Specification

Transistor Code RU30231R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 230A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0028Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 930pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 96nS
Gate-Threshold Voltage (Maximum) 4V

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