RU30160S MOSFET Transistor

The RU30160S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30160S transistor as follows.

RU30160S Transistor Specification

Transistor Code		RU30160S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	160A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	188W
Drain-Source Capacitance		660pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		4V

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