RU30120S MOSFET Transistor

The RU30120S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30120S transistor as follows.

RU30120S Transistor Specification

Transistor Code		RU30120S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		480pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		106nS
Gate-Threshold Voltage (Maximum)		3V

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