RU2HE5L MOSFET Transistor

The RU2HE5L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU2HE5L transistor as follows.

RU2HE5L Transistor Specification

Transistor Code		RU2HE5L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		4V

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