RU2HE2D MOSFET Transistor

The RU2HE2D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU2HE2D transistor as follows.

RU2HE2D Transistor Specification

Transistor Code		RU2HE2D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		42pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

UXPython is not the creator or an official representative of the RU2HE2D MOSFET transistor. You can download the official RU2HE2D MOSFET transistor datasheet to get more infromation about this transistor.

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