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RU20T8M7 MOSFET Transistor

The RU20T8M7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU20T8M7 transistor as follows.

Circuit diagram symbol of the RU20T8M7 transistor

RU20T8M7 Transistor Specification

Transistor Code RU20T8M7
Transistor Type MOSFET
Control Channel Type N-Channel
Package SDFN2050
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 1.7W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 1.5V

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