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RU20P5E MOSFET Transistor

The RU20P5E is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU20P5E transistor as follows.

Circuit diagram symbol of the RU20P5E transistor

RU20P5E Transistor Specification

Transistor Code RU20P5E
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-89
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1.5V

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