RU20E60L MOSFET Transistor

The RU20E60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU20E60L transistor as follows.

RU20E60L Transistor Specification

Transistor Code		RU20E60L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1.5V

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