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RU20D10H MOSFET Transistor

The RU20D10H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU20D10H transistor as follows.

Circuit diagram symbol of the RU20D10H transistor

RU20D10H Transistor Specification

Transistor Code RU20D10H
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 124pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 1.5V

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