RU2021H MOSFET Transistor

The RU2021H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU2021H transistor as follows.

RU2021H Transistor Specification

Transistor Code		RU2021H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0052Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		1530pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		2.5V

UXPython is not the creator or an official representative of the RU2021H MOSFET transistor. You can download the official RU2021H MOSFET transistor datasheet to get more infromation about this transistor.

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