RU2013H MOSFET Transistor

The RU2013H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU2013H transistor as follows.

RU2013H Transistor Specification

Transistor Code		RU2013H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		124pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1.5V

UXPython is not the creator or an official representative of the RU2013H MOSFET transistor. You can download the official RU2013H MOSFET transistor datasheet to get more infromation about this transistor.

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