RU1Z200Q MOSFET Transistor

The RU1Z200Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1Z200Q transistor as follows.

RU1Z200Q Transistor Specification

Transistor Code		RU1Z200Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	600W
Drain-Source Capacitance		1420pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		205nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		390nC

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