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RU1L002SN MOSFET Transistor

The RU1L002SN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1L002SN transistor as follows.

Circuit diagram symbol of the RU1L002SN transistor

RU1L002SN Transistor Specification

Transistor Code RU1L002SN
Transistor Type MOSFET
Control Channel Type N-Channel
Package UMT3F
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.25A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.7Ohm
Power Dissipation (Maximum) PD 0.2W
Drain-Source Capacitance 4.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS

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