RU1J002YN MOSFET Transistor

The RU1J002YN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1J002YN transistor as follows.

RU1J002YN Transistor Specification

Transistor Code		RU1J002YN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UMT3F
Transistor SMD Code		QJ
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		6pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		0.8V

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