RU1HP55R MOSFET Transistor

The RU1HP55R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1HP55R transistor as follows.

RU1HP55R Transistor Specification

Transistor Code		RU1HP55R
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	176W
Drain-Source Capacitance		535pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		87nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		155nC

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