RU1HL8L MOSFET Transistor

The RU1HL8L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1HL8L transistor as follows.

RU1HL8L Transistor Specification

Transistor Code		RU1HL8L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.5V

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