RU1HL13R MOSFET Transistor

The RU1HL13R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1HL13R transistor as follows.

RU1HL13R Transistor Specification

Transistor Code		RU1HL13R
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	54W
Drain-Source Capacitance		616pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		2.7V

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