RU1HE4D MOSFET Transistor

The RU1HE4D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1HE4D transistor as follows.

RU1HE4D Transistor Specification

Transistor Code		RU1HE4D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		46pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		2.7V

UXPython is not the creator or an official representative of the RU1HE4D MOSFET transistor. You can download the official RU1HE4D MOSFET transistor datasheet to get more infromation about this transistor.

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