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RU1HE3H MOSFET Transistor

The RU1HE3H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1HE3H transistor as follows.

Circuit diagram symbol of the RU1HE3H transistor

RU1HE3H Transistor Specification

Transistor Code RU1HE3H
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 2.7V

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