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RU1H7H MOSFET Transistor

The RU1H7H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1H7H transistor as follows.

Circuit diagram symbol of the RU1H7H transistor

RU1H7H Transistor Specification

Transistor Code RU1H7H
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 3.1W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 76nS
Gate-Threshold Voltage (Maximum) 4V

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