RU1H60R MOSFET Transistor

The RU1H60R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1H60R transistor as follows.

RU1H60R Transistor Specification

Transistor Code		RU1H60R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		760pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		3V

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