RU1H36S MOSFET Transistor

The RU1H36S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1H36S transistor as follows.

RU1H36S Transistor Specification

Transistor Code		RU1H36S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	79W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		95nS
Gate-Threshold Voltage (Maximum)		4V

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