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RU1H35L MOSFET Transistor

The RU1H35L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1H35L transistor as follows.

Circuit diagram symbol of the RU1H35L transistor

RU1H35L Transistor Specification

Transistor Code RU1H35L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.025Ohm
Power Dissipation (Maximum) PD 97W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 76nS
Gate-Threshold Voltage (Maximum) 4V

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