RU1H35K MOSFET Transistor

The RU1H35K is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1H35K transistor as follows.

RU1H35K Transistor Specification

Transistor Code		RU1H35K
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	97W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		76nS
Gate-Threshold Voltage (Maximum)		4V

UXPython is not the creator or an official representative of the RU1H35K MOSFET transistor. You can download the official RU1H35K MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

QM3001U MOSFET Transistor SIHFU224 MOSFET Transistor MSU4N40 MOSFET Transistor MSU4N65 MOSFET Transistor AOU2N60 MOSFET Transistor IPU60R1K0CE MOSFET Transistor TSM2N70CH MOSFET Transistor IPU60R1K4C6 MOSFET Transistor AOU4N60 MOSFET Transistor SIHFU420 MOSFET Transistor IRFU9310PBF MOSFET Transistor SIHU3N50D MOSFET Transistor SIHFU1N60A MOSFET Transistor AP9565BGJ-HF MOSFET Transistor AP9565GEJ MOSFET Transistor MSU1N60U MOSFET Transistor IPU60R1K5CE MOSFET Transistor SIHFU320 MOSFET Transistor SIHFU9210 MOSFET Transistor IRFU3518PBF MOSFET Transistor