RU1H300Q MOSFET Transistor

The RU1H300Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1H300Q transistor as follows.

RU1H300Q Transistor Specification

Transistor Code		RU1H300Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	300A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	600W
Drain-Source Capacitance		1450pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		225nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		430nC

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