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RU1C001ZP MOSFET Transistor

The RU1C001ZP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1C001ZP transistor as follows.

Circuit diagram symbol of the RU1C001ZP transistor

RU1C001ZP Transistor Specification

Transistor Code RU1C001ZP
Transistor Type MOSFET
Control Channel Type P-Channel
Package UMT3F
Transistor SMD Code RX
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.8Ohm
Power Dissipation (Maximum) PD 0.15W
Drain-Source Capacitance 4pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 62nS
Gate-Threshold Voltage (Maximum) 1V

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