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RU1C001UN MOSFET Transistor

The RU1C001UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1C001UN transistor as follows.

Circuit diagram symbol of the RU1C001UN transistor

RU1C001UN Transistor Specification

Transistor Code RU1C001UN
Transistor Type MOSFET
Control Channel Type N-Channel
Package UMT3F
Transistor SMD Code RW
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.5Ohm
Power Dissipation (Maximum) PD 0.15W
Drain-Source Capacitance 3.3pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 1V

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