RU190N10Q MOSFET Transistor

The RU190N10Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU190N10Q transistor as follows.

RU190N10Q Transistor Specification

Transistor Code		RU190N10Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	190A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	312W
Drain-Source Capacitance		1000pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		155nC

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