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RU190N08R MOSFET Transistor

The RU190N08R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU190N08R transistor as follows.

Circuit diagram symbol of the RU190N08R transistor

RU190N08R Transistor Specification

Transistor Code RU190N08R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 190A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0048Ohm
Power Dissipation (Maximum) PD 400W
Drain-Source Capacitance 1100pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 22nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 155nC

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