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RU16P8M4 MOSFET Transistor

The RU16P8M4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU16P8M4 transistor as follows.

Circuit diagram symbol of the RU16P8M4 transistor

RU16P8M4 Transistor Specification

Transistor Code RU16P8M4
Transistor Type MOSFET
Control Channel Type P-Channel
Package SDFN2020
Transistor SMD Code 16P8
Drain-Source Voltage (Maximum) VDS 16V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1.1V

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