RTQ035P02TR MOSFET Transistor

The RTQ035P02TR is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RTQ035P02TR transistor as follows.

RTQ035P02TR Transistor Specification

Transistor Code		RTQ035P02TR
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT6
Transistor SMD Code		TL
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		10.5nC

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