RTQ035N03 MOSFET Transistor

The RTQ035N03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RTQ035N03 transistor as follows.

RTQ035N03 Transistor Specification

Transistor Code		RTQ035N03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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