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RTQ025P02TR MOSFET Transistor

The RTQ025P02TR is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RTQ025P02TR transistor as follows.

Circuit diagram symbol of the RTQ025P02TR transistor

RTQ025P02TR Transistor Specification

Transistor Code RTQ025P02TR
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSMT6
Transistor SMD Code TQ
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 6.4nC

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