RTP315N10F7 MOSFET Transistor

The RTP315N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RTP315N10F7 transistor as follows.

RTP315N10F7 Transistor Specification

Transistor Code		RTP315N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		R315N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0027Ohm
Power Dissipation (Maximum)	PD	315W
Drain-Source Capacitance		3500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		108nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		180nC

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