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RTL030P02TR MOSFET Transistor

The RTL030P02TR is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RTL030P02TR transistor as follows.

Circuit diagram symbol of the RTL030P02TR transistor

RTL030P02TR Transistor Specification

Transistor Code RTL030P02TR
Transistor Type MOSFET
Control Channel Type P-Channel
Package TUMT6
Transistor SMD Code WN
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.07Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 125pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 8nC

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