RT3J55M MOSFET Transistor

The RT3J55M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RT3J55M transistor as follows.

RT3J55M Transistor Specification

Transistor Code		RT3J55M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-88
Transistor SMD Code		J55
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.8Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		6pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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