RT1A050ZPTR MOSFET Transistor

The RT1A050ZPTR is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RT1A050ZPTR transistor as follows.

RT1A050ZPTR Transistor Specification

Transistor Code		RT1A050ZPTR
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSST8
Transistor SMD Code		YH
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		95nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		34nC

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