RT1A050ZP MOSFET Transistor

The RT1A050ZP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RT1A050ZP transistor as follows.

RT1A050ZP Transistor Specification

Transistor Code		RT1A050ZP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSST8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		95nS
Total Gate Charge		34nC

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