RSU002P03T106 MOSFET Transistor

The RSU002P03T106 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSU002P03T106 transistor as follows.

RSU002P03T106 Transistor Specification

Transistor Code		RSU002P03T106
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		UMT3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		4pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		2.5V

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