RSS110N03TB MOSFET Transistor

The RSS110N03TB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSS110N03TB transistor as follows.

RSS110N03TB Transistor Specification

Transistor Code		RSS110N03TB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0104Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		410pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		17nC

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