RSS090P03FU6TB MOSFET Transistor

The RSS090P03FU6TB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSS090P03FU6TB transistor as follows.

RSS090P03FU6TB Transistor Specification

Transistor Code		RSS090P03FU6TB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		750pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		39nC

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