RSR025N05 MOSFET Transistor

The RSR025N05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSR025N05 transistor as follows.

RSR025N05 Transistor Specification

Transistor Code		RSR025N05
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT3
Drain-Source Voltage (Maximum)	VDS	45V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS

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