RSR010N10FHA MOSFET Transistor

The RSR010N10FHA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSR010N10FHA transistor as follows.

RSR010N10FHA Transistor Specification

Transistor Code		RSR010N10FHA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT3
Transistor SMD Code		ZJ
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.52Ohm
Power Dissipation (Maximum)	PD	0.54W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		3.5nC

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