RSR010N10 MOSFET Transistor

The RSR010N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSR010N10 transistor as follows.

RSR010N10 Transistor Specification

Transistor Code		RSR010N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.37Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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