RSQ025P03TR MOSFET Transistor

The RSQ025P03TR is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSQ025P03TR transistor as follows.

RSQ025P03TR Transistor Specification

Transistor Code		RSQ025P03TR
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT6
Transistor SMD Code		TP
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		4.4nC

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