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RSQ015N06TR MOSFET Transistor

The RSQ015N06TR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RSQ015N06TR transistor as follows.

Circuit diagram symbol of the RSQ015N06TR transistor

RSQ015N06TR Transistor Specification

Transistor Code RSQ015N06TR
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSMT6
Transistor SMD Code PX
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.29Ohm
Power Dissipation (Maximum) PD 0.6W
Drain-Source Capacitance 28pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 2nC

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